BYV32E-200P Datasheet - NXP

BYV32E-200P, Dual ultrafast power diode

TO-220AB BYV32E-200P Dual ultrafast power diode 14 May 2015 Product data sheet 1.
General description Dual ultrafast power diode in a SOT78 (TO-220

Features

* Ultra low leakage current
* High junction temperature up to 175 °C
* Low on-state loss
* Fast switching
* Soft recovery characteristic minimizes power consuming oscillations
* High reverse surge capability
* High thermal cycling performance

Applications

* Home appliance power supply 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) average output current δ = 0.5; Tmb ≤ 149 °C; Square-ware pulse IFSM non-repetitive peak Tj(init) = 25 °C; tp = 8.3 ms; SIN;

BYV32E-200P-NXP.pdf