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IRFZ44N N-Channel MOSFET

IRFZ44N Description

www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

IRFZ44N Applications

* IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 49 110 175 22 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DES

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