Datasheet Specifications
- Part number
- LA6H0912-500
- Manufacturer
- NXP ↗
- File Size
- 86.72 KB
- Datasheet
- LA6H0912-500_PhilipsSemiconductors.pdf
- Description
- LDMOS Avionics Radar Power Transistor
Description
BLA6H0912-500 LDMOS avionics radar power transistor Rev.01 * 5 March 2009 www.datasheet4u.com Objective data sheet 1.Product profile 1.1 Ge.
Features
* I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 17 dB N Efficiency = 50 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse foApplications
* in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (MHz) 960 to 1200 VDS (V) 50 PL (W) 500 Gp (dB) 17LA6H0912-500 Distributors
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