LA6H0912-500 Datasheet, Transistor, NXP

LA6H0912-500 Features

• Transistor I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 1

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LA6H0912-500

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📄 Datasheet

Description:

Ldmos avionics radar power transistor. 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JT

LA6H0912-500 Application

• Applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase

TAGS

LA6H0912-500

NXP

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