LA6H0912-500 Datasheet - NXP

LA6H0912-500 LDMOS Avionics Radar Power Transistor

500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode.

LA6H0912-500 Features

* I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %: N Output power = 500 W N Power gain = 17 dB N Efﬁciency = 50 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse fo

LA6H0912-500_PhilipsSemiconductors.pdf