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LFE18500X Datasheet - NXP

LFE18500X NPN silicon planar epitaxial microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LFE18500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION.

LFE18500X Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LFE18500X_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

LFE18500X

Manufacturer:

NXP ↗

File Size:

62.00 KB

Description:

Npn silicon planar epitaxial microwave power transistor.

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LFE18500X LFE18500X NPN silicon planar epitaxial microwave power transistor NXP

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