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LV2327E40R NPN microwave power transistor

LV2327E40R Description

DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discre.
1 Common emitter class A linear wideband power amplifiers in the 2.

LV2327E40R Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry g

LV2327E40R Applications

* handbook, halfpage LV2327E40R QUICK REFERENCE DATA Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit. MODE OF OPERATION CW; linear amplifier f (MHz) VCE (V) 1 IC (A) PL1 (W) ≥4 GPO (dB) ≥7 Zi (Ω) 11 + j3 ZL (Ω) 7.5
* j9 2.3 to 2.7 16 PINNING - SOT445B PI

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NPN microwave power transistor NXP
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