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LV2327E40R

NPN microwave power transistor

LV2327E40R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry g

LV2327E40R General Description

1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange. 3 2 Top view MAM315 c b 3 e Marking code: 2327E40R. Fig.1 Si.

LV2327E40R Datasheet (47.57 KB)

Preview of LV2327E40R PDF

Datasheet Details

Part number:

LV2327E40R

Manufacturer:

NXP ↗

File Size:

47.57 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product speciļ¬cation Supersedes data of November 1994 File under Discre.

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LV2327E40R NPN microwave power transistor NXP

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