LV2327E40R - NPN microwave power transistor

NXP

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Datasheet Details

Part number	LV2327E40R
Manufacturer	NXP
File Size	47.57 KB
Description	NPN microwave power transistor
Datasheet	LV2327E40R_PhilipsSemiconductors.pdf

LV2327E40R Product details

Description

1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.3 2 Top view MAM315 c b 3 e Marking code: 2327E40R.Fig.1 Simplified outline and symbol.WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.The product is entirely safe provided that the BeO slab is not damaged.

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

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Published: Mar 30, 2005 |