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LWE2010S NPN microwave power transistor

LWE2010S Description

DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.

LWE2010S Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi

LWE2010S Applications

* Common emitter class A power amplifiers at frequencies up to 2.3 GHz. handbook, halfpage LWE2010S QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION class A (CW) f (GHz) 2.3 VCE (V) 18 IC (mA) 110 PL1 (W) ≥0.8 Gpo (dB) ≥8

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