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LWE2010S NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.

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Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi

Applications

* Common emitter class A power amplifiers at frequencies up to 2.3 GHz. handbook, halfpage LWE2010S QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION class A (CW) f (GHz) 2.3 VCE (V) 18 IC (mA) 110 PL1 (W) ≥0.8 Gpo (dB) ≥8

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