LWE2010S Datasheet - NXP

NPN microwave power transistor

LWE2010S Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LWE2010S General Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange. 1 c 3 b e 2 MAM313 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium o.

LWE2010S Datasheet (74.48 KB)

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LWE2010S

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NXP ↗

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74.48 KB

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Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete.

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LWE2010S NPN microwave power transistor NXP

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LWE2010S General Description

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