LWE2010S Datasheet - NXP

LWE2010S NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange. 1 c 3 b e 2 MAM313 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium o.

LWE2010S Features

* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

* Interdigitated structure provides high emitter efficiency

* Gold metallization realizes very good stability of the characteristics and excellent lifetime

* Multi

LWE2010S Datasheet (74.48 KB)