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LWE2015R Datasheet - NXP

NPN microwave power transistor

LWE2015R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry giv

LWE2015R General Description

APPLICATIONS * Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. Marking code: 411 Fig.1 Simpli.

LWE2015R Datasheet (62.42 KB)

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LWE2015R

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NXP ↗

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62.42 KB

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Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete.

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LWE2015R NPN microwave power transistor NXP

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LWE2015R General Description

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