LWE2015R Datasheet - NXP

LWE2015R NPN microwave power transistor

APPLICATIONS * Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. Marking code: 411 Fig.1 Simpli.

LWE2015R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry giv

LWE2015R Datasheet (62.42 KB)