LWE2015R Datasheet, Transistor, NXP

LWE2015R Features

• Transistor
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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PDF File Details

Part number:

LWE2015R

Manufacturer:

NXP ↗

File Size:

62.42kb

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📄 Datasheet

Description:

Npn microwave power transistor. APPLICATIONS

Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications.

LWE2015R Application

• Applications
• Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1

TAGS

LWE2015R

NXP

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