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LWE2015R NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete.
APPLICATIONS. Common emitter class-A amplifiers up to 2.

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Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv

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