Part number:
NX5L2750C
Manufacturer:
File Size:
137.11 KB
Description:
Analog switch.
* Supply voltage range from 1.8 V to 5.0 V
* 0.8 typical ON resistance
* 100 MHz typical bandwidth or data frequency
* CMOS low-power consumption
* 1.8 V control logic at VCC = 3.6 V
* Break-before-make switching
* ESD protection:
* HBM JESD22-A114F Class 3A exceeds
NX5L2750C Datasheet (137.11 KB)
NX5L2750C
137.11 KB
Analog switch.
📁 Related Datasheet
NX5008NBKM - N-channel Trench MOSFET
(nexperia)
NX5008NBKM
50 V, N-channel Trench MOSFET
1 September 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transist.
NX5020UNBK - 50V N-channel Trench MOSFET
(nexperia)
NX5020UNBK
50 V, N-channel Trench MOSFET
26 February 2025
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transist.
NX5032SA - Crystal Units
(ETC)
CRYSTAL UNITS
For Mobile Communication SURFACE MOUNT TYPE CRYSTAL UNITS / NX5032SA
This is highly precise small-sized surface-mounted crystal unit opt.
NX5032SD - Crystal Units
(ETC)
Specification of Crystal Units
1 NDK Part Number 2 NDK Specification Number 3 Type
4 Electrical Characteristics 4.1 Nominal Frequency (f nom)
4.2 Ov.
NX5302 - LASER DIODE
(CEL)
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5302 Series FOR FIBER OPTIC COMMUNICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0 mW • LO.
NX5304 - LASER DIODE
(California Eastern Labs)
DATA SHEET
NEC's 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER .
NX5306 - LASER DIODE
(NEC)
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0.
NX5306EHNX5306EK - LASER DIODE
(NEC)
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER: PO = 5.0.