PBSS9110D
PBSS9110D is PNP transistor manufactured by NXP Semiconductors.
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PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
NPN plement: PBSS8110D.
1.2 Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (h FE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
- High-voltage DC-to-DC conversion
- High-voltage MOSFET gate driving
- High-voltage motor control
- High-voltage power switches (e.g. motors, fans)
- Automotive applications
1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions open base single pulse; tp ≤ 1 ms IC =
- 1 A; IB =
- 100 m A
Min Typ Max
Unit
- -
- 100 V
- -
- 1 A
- -
- 3...
