PBSS9110D PNP transistor

NXP

Description

PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev.03 * 22 November 2009 Product data sheet 1.Product profile 1.1 General descript.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS9110D
Manufacturer: NXP ↗
File Size: 167.28 KB
Datasheet: PBSS9110D-NXP.pdf
Description: PNP transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventio

Applications

* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* High-voltage power switches (e. g. motors, fans)
* Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collec

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PBSS9110D PNP transistor NXP

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