* Built-in bias resistors
* Simplified circuit design
* Reduction of component count
* Reduced pick and place costs. APPLICATIONS
* General purpose switching and amplification
* Inverter and interface circuits
* Circuit driver. DESCRIPTION PDT
PDTC143ZEF Datasheet (93.66 KB)
PDTC143ZEF
93.66 KB
Npn resistor-equipped transistors; r1 = 4.7 kw/ r2 = 47 kw.
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification Supersedes data o.
📁 Related Datasheet
PDTC143ZE - NPN resistor-equipped transistors
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification Supersedes data o.
PDTC143ZE - NPN resistor-equipped transistors
(nexperia)
PDTC143Z series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
Rev. 8 — 5 December 2011
Product data sheet
1. Product profile
1.1 Gener.
PDTC143Z - NPN resistor-equipped transistors
(nexperia)
PDTC143Z series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
Rev. 8 — 5 December 2011
Product data sheet
1. Product profile
1.1 Gener.
PDTC143Z - NPN resistor-equipped transistors
(NXP)
PDTC143Z series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
Rev. 8 — 5 December 2011
Product data sheet
1. Product profile
1.1 Gener.
PDTC143ZK - NPN resistor-equipped transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTC143ZK NPN resistor-equipped transistor
Product specification Supersedes data of 1998 Ma.
PDTC143ZM - NPN resistor-equipped transistors; R1 = 4.7 kW/ R2 = 47 kW
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification Supersedes data o.
PDTC143ZM - NPN resistor-equipped transistors
(nexperia)
PDTC143Z series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
Rev. 8 — 5 December 2011
Product data sheet
1. Product profile
1.1 Gener.
PDTC143ZMB - NPN resistor-equipped transistor
(NXP)
SOT883B
PDTC143ZMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
Rev. 1 — 11 June 2012
Product data sheet
1. Product profile
1.1 Gen.
