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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH10 NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
Preliminary specification 2001 Oct 22
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666 plastic package.
PEMH10 Datasheet
