• Part: PESD5V0C1BSF
  • Description: Ultra low capacitance bidirectional ESD protection diode
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 180.50 KB
Download PESD5V0C1BSF Datasheet PDF
NXP Semiconductors
PESD5V0C1BSF
description Ultra low capacitance bidirectional Electro Static Discharge (ESD) protection diode, part of the Tr EOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package. The Tr EOS Protection family is optimized for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of robustness. 2. Features and benefits - Bidirectional ESD protection of one line - Extremely low diode capacitance Cd = 0.2 p F - ESD protection up to ±20 k V according to IEC 61000-4-2 - Ultra small SMD package 3. Applications ESD and surge protection for: - ultra high-speed datalines - very sensitive interface lines - generic interface lines in portable electronics, munication, consumer and puting devices. 4. Quick reference data Table 1. Symbol Cd VRWM Quick reference data Parameter diode capacitance reverse standoff voltage Conditions f = 1 MHz; VR = 0 V; Tamb = 25 °C Tamb = 25 °C Min Typ Max Unit - 0.2 0.25 p F...