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PESD5V0L2UM Datasheet Low Capacitance Double Esd Protection Diode

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product specification 2003 Aug 05 Philips Semiconductors Product specification Low capacitance double ESD.

General Description

Low capacitance ESD protection diode in a three pad SOT883 leadless ultra small plastic package designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.

PINNING PIN 1 2 3 cathode 1 cathode 2 mon anode DESCRIPTION handbook, halfpage 2 1 3 3 1 Bottom view MLE220 Fig.1 Simplified outline (SOT883) and symbol.

2003 Aug 05 2 Philips Semiconductors Product specification Low capacitance double ESD protection diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).

Key Features

  • Uni-directional ESD protection of two lines or bi-directional ESD protection of one line.
  • Reverse standoff voltage 3.3 and 5 V.
  • Low diode capacitance.
  • Ultra low leakage current.
  • Leadless ultra small SOT883 surface mount package (1 × 0.6 × 0.5 mm).
  • Board space 1.17 mm2 (approx. 10% of SOT23).
  • ESD protection >15 kV.
  • IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact).

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