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PESD5V0L5UY Datasheet Low capacitance 5-fold ESD protection diode arrays

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 www.DataSheet4U.

General Description

common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).

MARKING TYPE NUMBER PESD3V3L5UY PESD5V0L5UY Note 1.

* = p: Made in Hong Kong.

Key Features

  • Uni-directional ESD protection of up to five lines.
  • Bi-directional ESD protection of up to four lines.
  • Low diode capacitance.
  • Maximum peak pulse power: Ppp = 25 W at tp = 8/20 µs.
  • Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection > 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.