PESD5V0L5UY NXP Semiconductors Datasheet

PESD5V0L5UY Key Features

• Uni-directional ESD protection of up to five lines
• Bi-directional ESD protection of up to four lines
• Low diode capacitance
• Maximum peak pulse power: Ppp = 25 W at tp = 8/20 µs
• Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A
• Ultra low leakage current: IRM = 8 nA at VRWM = 5 V
• ESD protection > 20 kV
• IEC 61000-4-2; level 4 (ESD)