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PESD5V0L7BS - Low Capacitance 7-fold Bi-directional Esd Protection Diode Array

Description

www.DataSheet4U.com PESD5V0L7BS QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance; VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1, 2, 3, 4, 5, 6, 7, 8 DESCRIPTION cathodes VALUE 5 8 7 UNIT V pF 1 2 3 4 001aaa389 8 7 6 5 1 2 3 4 8 7 6 5 Low

Features

  • Bi-directional ESD protection of up to 7 lines.
  • Low diode capacitance.
  • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 17 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 3 nA at VRWM = 5 V.
  • ESD protection: >10 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC 61000-4-5; (surge): Ipp = 2.5 A at tp = 8/20 µs.

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Datasheet Details

Part number PESD5V0L7BS
Manufacturer NXP Semiconductors
File Size 131.74 KB
Description Low Capacitance 7-fold Bi-directional Esd Protection Diode Array
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L7BS Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package Product specification 2004 Mar 15 Philips Semiconductors Product specification Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package FEATURES • Bi-directional ESD protection of up to 7 lines • Low diode capacitance • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 17 V at Ipp = 2.5 A • Ultra low leakage current: IRM = 3 nA at VRWM = 5 V • ESD protection: >10 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5; (surge): Ipp = 2.5 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports.
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