• Part: PESD5V0L6US
  • Description: Low Capacitance 6-fold Esd Protection Diode Array
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 131.60 KB
Download PESD5V0L6US Datasheet PDF
NXP Semiconductors
PESD5V0L6US
FEATURES - Unidirectional ESD protection of up to 6 lines - Bidirectional ESD protection of up to 5 lines - Low diode capacitance - Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs - Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A - Ultra low leakage current: IRM = 8 n A at VRWM = 5 V - ESD protection up to 20 k V - IEC 61000-4-2; level 4 (ESD) - IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs. APPLICATIONS - puters and peripherals - munication systems - Audio and video equipment - High speed data lines - Parallel ports. .. QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance; VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1, 2, 3, 4, 5, 8 6, 7 cathodes mon anode DESCRIPTION VALUE 5 16 6 UNIT V p F 1 2 3 4 001aaa388 8 7 6 5 1 2 3 4 8 7 6 5 DESCRIPTION Low capacitance 6-fold ESD protection diode array in a small S08 plastic package designed to protect up to six transmission or data lines against damage caused by...