* High current (max. 600 mA)
* Low voltage (max. 60 V). APPLICATIONS
* Switching and linear amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PH2222A. PINNING PIN 1 2 3 emitter base collector PH2907A DESCRIPTION 1 handbo
PH2907A
45.40 KB
Pnp switching transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH2907A PNP switching transistor
Product specification Supersedes data of 1997 Jun 02 1999 .
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DISCRETE SEMICONDUCTORS
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M3D186
PH2907A PNP switching transistor
Product specification Supersedes data of 1997 Jun 02 1999 .
PH2920 - N-channel enhancement mode field-effect transistor
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PH2920
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M3D748
Rev. 01 — 13 June 2003
Product data
1. Product profile
1.1 Description
N-channel enh.
PH2925U - N-channel TrenchMOS ultra low level FET
(NXP)
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M3D748
Rev. 02 — 08 April 2004
Product data
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1.1 Description
N-channel enhancemen.
PH2925U - N-Channel MOSFET
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1.1 General description
Ultra low .
PH2931-20M - Radar Pulsed Power Transistor/ 20W/100ms Pulse/ 10% Duty 2.9-3.1 GHz
(Tyco Electronics)
.
PH2931-20M - Radar Pulsed Power Transistor
(MA-COM)
PH2931-20M
Radar Pulsed Power Transistor 20W, 2.9-3.1 GHz, 100µs Pulse, 10% Duty
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NPN silicon microwave power transistors Common base conf.
PH2931-5M - Radar Pulsed Power Transistor/5W/100ms Pulse/ 10% Duty 2.9-3.1 GHz
(Tyco Electronics)
.
PH2931-I3 - Radar Pulsed Power Transistor/ 135W/ 20ms Pulse/ 1% Duty 2.9 - 3.1 GHz
(Tyco Electronics)
*
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Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz
Features
NPN.
