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PHB11N06LT Datasheet - NXP

PHB11N06LT - N-channel TrenchMOS transistor Logic level FET

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

The PHB11N06LT is supplied in the SOT404 surf

PHB11N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(

PHB11N06LT_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHB11N06LT

Manufacturer:

NXP ↗

File Size:

76.41 KB

Description:

N-channel trenchmos transistor logic level fet.

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