PHB11N06LT Datasheet - NXP

PHB11N06LT N-channel TrenchMOS transistor Logic level FET

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surf.

PHB11N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(

PHB11N06LT_PhilipsSemiconductors.pdf