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PHB11N06LT - N-channel TrenchMOS transistor Logic level FET

PHB11N06LT Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

PHB11N06LT Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(

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N-channel TrenchMOS transistor Logic level FET NXP
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