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PHB11N50E

PowerMOS transistors Avalanche energy rated

PHB11N50E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTI

PHB11N50E General Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW11N50E is supplied in the SOT429 (TO247) .

PHB11N50E Datasheet (102.94 KB)

Preview of PHB11N50E PDF

Datasheet Details

Part number:

PHB11N50E

Manufacturer:

NXP ↗

File Size:

102.94 KB

Description:

Powermos transistors avalanche energy rated.

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PHB11N50E PowerMOS transistors Avalanche energy rated NXP

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