Part number:
PHB11N50E
Manufacturer:
File Size:
102.94 KB
Description:
Powermos transistors avalanche energy rated.
* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTI
PHB11N50E Datasheet (102.94 KB)
PHB11N50E
102.94 KB
Powermos transistors avalanche energy rated.
📁 Related Datasheet
PHB11N03LT N-channel TrenchMOS transistor Logic level FET (NXP)
PHB11N06LT N-channel TrenchMOS transistor Logic level FET (NXP)
PHB110NQ06LT N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHB110NQ08LT N-channel TrenchMOS logic level FET (NXP Semiconductors)
PHB110NQ08T N-Channel MOSFET (nexperia)
PHB110NQ08T N-Channel MOSFET (NXP Semiconductors)
PHB112N06T N-channel enhancement mode field-effect transistor (NXP)
PHB119NQ06T N-channel TrenchMOS standard level FET (NXP Semiconductors)
PHB100N03LT N-channel enhancement mode field-effect transistor (NXP)
PHB101NQ03LT TrenchMOS logic level FET (NXP)