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PHB11N50E - PowerMOS transistors Avalanche energy rated

PHB11N50E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB11N50E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTI

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PowerMOS transistors Avalanche energy rated NXP
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