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PHB11N50E - PowerMOS transistors Avalanche energy rated

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NXP

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PHB11N50E PowerMOS transistors Avalanche energy rated by NXP - Datasheet Preview — Datasheet preview – PHB11N50E

Datasheet Details

Part number	PHB11N50E
Manufacturer	NXP
File Size	102.94 KB
Description	PowerMOS transistors Avalanche energy rated
Datasheet	PHB11N50E Datasheet
Additional preview pages of the PHB11N50E datasheet.

Product details

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK.

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Published: Mar 22, 2005 |