PHB23NQ10T Datasheet, Transistor, NXP

PHB23NQ10T Features

• Transistor
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL D

PDF File Details

Part number:

PHB23NQ10T

Manufacturer:

NXP ↗

File Size:

99.37kb

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📄 Datasheet

Description:

N-channel trenchmos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:

d.c.

PHB23NQ10T Application

• Applications
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies The PHP23NQ

TAGS

PHB23NQ10T

NXP

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