Part number:
PHB23NQ10T
Manufacturer:
File Size:
99.37 KB
Description:
N-channel trenchmos transistor.
PHB23NQ10T Datasheet (99.37 KB)
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology
PHB23NQ10T Datasheet (99.37 KB)
PHB23NQ10T
99.37 KB
N-channel trenchmos transistor.
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