PHB21N06T Datasheet, Fet, NXP

PHB21N06T Features

  • Fet very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB21

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Part number:

PHB21N06T

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NXP ↗

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📄 Datasheet

Description:

Trenchmos transistor standard level fet. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’t

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Page 2 of PHB21N06T Page 3 of PHB21N06T

PHB21N06T Application

  • Applications PHB21N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipati

TAGS

PHB21N06T
TrenchMOS
transistor
Standard
level
FET
NXP

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