PHB20NQ20T Datasheet | NXP Semiconductors

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Higher operating power due to low thermal resistance - Low conduction losses due to low on-state resistance - Suitable for high frequency applications due to fast switching characteristics 1.3 Applications - DC-to-DC converters - General purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 10 A; Tj = 25 °C VGS = 10 V; ID = 20 A; VDS = 160 V; Tj = 25 °C Min Typ Max Unit - - 200 V - - 20 A - - 150 W - 120 130 mΩ - 22 - n C NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain[1] S source D mounting base; connected to drain Simplified outline mb 2 13 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Graphic symbol G mbb076...