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PHB21N06T - TrenchMOS transistor Standard level FET

Datasheet Summary

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching.

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Datasheet Details

Part number PHB21N06T
Manufacturer NXP
File Size 69.23 KB
Description TrenchMOS transistor Standard level FET
Datasheet download datasheet PHB21N06T Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB21N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
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