PHB20N06T Datasheet | Nexperia

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Suitable for high frequency applications due to fast switching characteristics 1.3 Applications - DC-to-DC convertors - Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 3 and 1 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 175 °C; see Figure 11 and 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 11 and 12 Min Typ Max Unit - - 55 V - - 20.3 A - - 62 W - 6 - n C - - 150 mΩ - 64 75 mΩ Nexperia N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1G gate 2D drain 3S source mb D mounting base; connected to...