PHB45N03LT

TrenchMOS transistor Logic level FET

NXP

PHB45N03LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance

* Surface mounting package PHB45N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 3

PHB45N03LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB45N03LT is supplied in the SOT404 surfac.

PHB45N03LT Datasheet (61.45 KB)