PHB45N03T Datasheet, Fet, NXP

PHB45N03T Features

• Fet very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB45

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PHB45N03T

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NXP ↗

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📄 Datasheet

Description:

Trenchmos transistor standard level fet. N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’tr

PHB45N03T Application

• Applications PHB45N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipati

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PHB45N03T

NXP

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