PHB4N60E PowerMOS transistors Avalanche energy rated

NXP

PHB4N60E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB4N60E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance

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PHB4N60E Datasheet Preview — Preview of PHB4N60E PDF

Datasheet Details

Part number: PHB4N60E
Manufacturer: NXP ↗
File Size: 80.58 KB
Datasheet: PHB4N60E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

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PowerMOS transistors Avalanche energy rated NXP

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