PHB4ND40E PowerMOS transistors FREDFET/ Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

📥 Download Datasheet

PHB4ND40E Datasheet Preview — Preview of PHB4ND40E PDF

Datasheet Specifications

Part number: PHB4ND40E
Manufacturer: NXP ↗
File Size: 65.14 KB
Datasheet: PHB4ND40E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors FREDFET/ Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 4.4 A g

PHB4ND40E Distributors

📁 Related Datasheet

PHB45NQ10T PHB45NQ15T PHB-5R0H155-R PHB-5R0H255-R PHB-5R0H305-R PHB-5R0H505-R

📌 All Tags

PHB4ND40E PowerMOS transistors FREDFET Avalanche energy rated NXP

NXP PHB4ND40E-like datasheet