PHB4ND40E Datasheet (NXP) - PowerMOS transistors FREDFET/ Avalanche energy rated

PHB4ND40E, PowerMOS transistors FREDFET/ Avalanche energy rated

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

PHB4ND40E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance

* Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 4.4 A g