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PHB4ND40E

PowerMOS transistors FREDFET/ Avalanche energy rated

PHB4ND40E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance

* Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 4.4 A g

PHB4ND40E General Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. .

PHB4ND40E Datasheet (65.14 KB)

Preview of PHB4ND40E PDF

Datasheet Details

Part number:

PHB4ND40E

Manufacturer:

NXP ↗

File Size:

65.14 KB

Description:

Powermos transistors fredfet/ avalanche energy rated.

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TAGS

PHB4ND40E PowerMOS transistors FREDFET Avalanche energy rated NXP

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