PHB4ND40E PowerMOS transistors FREDFET/ Avalanche energy rated

NXP

PHB4ND40E Description

Philips Semiconductors Product specification PowerMOS transistors FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

PHB4ND40E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fast reverse recovery diode PHP4ND40E, PHB4ND40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 4.4 A g

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PHB4ND40E Datasheet Preview — Preview of PHB4ND40E PDF

Datasheet Details

Part number: PHB4ND40E
Manufacturer: NXP ↗
File Size: 65.14 KB
Datasheet: PHB4ND40E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors FREDFET/ Avalanche energy rated

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PowerMOS transistors FREDFET Avalanche energy rated NXP

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