PHB60N06LT

Transistor

NXP

PHB60N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHP60N06LT, PHB60N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 58 A g s RDS(

PHB60N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is supplied in the SOT78 (TO22.

PHB60N06LT Datasheet (71.01 KB)