PHB60N06T Transistor

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Datasheet Specifications

Part number: PHB60N06T
Manufacturer: NXP ↗
File Size: 68.52 KB
Datasheet: PHB60N06T_PhilipsSemiconductors.pdf
Description: Transistor

Applications

* PHB60N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 58 150 175 20 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DES

PHB60N06T Distributors

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PHB60N06T Transistor NXP

NXP PHB60N06T-like datasheet