PHB9N60E

Transistor

NXP

PHB9N60E Features

* Repetitive Avalanche Rated

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHB9N60E, PHW9N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 8.7 A RDS(ON) ≤ 0.8 Ω s GENERAL DESCRIPTION N

PHB9N60E General Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW9N60E is supplied in the SOT429 (TO247) c.

PHB9N60E Datasheet (102.88 KB)