Part number:
PHB9NQ20T
Manufacturer:
File Size:
110.94 KB
Description:
N-channel transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL VDSS = 200 V ID = 8.7 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in
PHB9NQ20T Datasheet (110.94 KB)
PHB9NQ20T
110.94 KB
N-channel transistor.
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