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PHD24N03 Transistor

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Description

Philips Semiconductors Preliminary specification TrenchMOS transistor Logic level FET .
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

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Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHD24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g RDS(ON) ≤ 56 mΩ (V

PHD24N03 Distributors

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