PHD55N03 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor PHD55N03 *.

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Datasheet Specifications

Part number: PHD55N03
Manufacturer: INCHANGE
File Size: 257.88 KB
Datasheet: PHD55N03-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 25 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 55 38 220 PD Total Dissipation @TC=25℃ 103 Tch Max. Operating J

PHD55N03 Distributors

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PHD55N03 N-Channel MOSFET INCHANGE

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