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PHD101NQ03LT - N-Channel MOSFET

Datasheet Summary

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Low conduction losses due to low on-state resistance.
  • Simple gate drive required due to low gate charge.
  • Suitable for logic level gate drive sources 1.3.

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Datasheet Details

Part number PHD101NQ03LT
Manufacturer NXP
File Size 167.79 KB
Description N-Channel MOSFET
Datasheet download datasheet PHD101NQ03LT Datasheet
Additional preview pages of the PHD101NQ03LT datasheet.

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Full PDF Text Transcription

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DPAK PHD101NQ03LT N-channel TrenchMOS logic level FET Rev. 5 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Simple gate drive required due to low gate charge  Suitable for logic level gate drive sources 1.3 Applications  DC-to-DC converters 1.4 Quick reference data Table 1.
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