PHD101NQ03LT Datasheet | NXP Semiconductors

DPAK N-channel TrenchMOS logic level FET Rev. 5 - 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Simple gate drive required due to low gate charge - Suitable for logic level gate drive sources 1.3 Applications - DC-to-DC converters 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source...