PHD101NQ03LT Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
PHD101NQ03LT Key Features
- Low conduction losses due to low on-state resistance
- Simple gate drive required due to low gate charge
- Suitable for logic level gate drive sources
PHD101NQ03LT Applications
- Low conduction losses due to low on-state resistance
- Simple gate drive required due to low gate charge
- Suitable for logic level gate drive sources
- DC-to-DC converters