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PHD110NQ03LT
N-channel TrenchMOS™ logic level FET
Rev. 01 — 16 June 2004
M3D300
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package.
1.3 Applications
s Control FET in DC-to-DC converters s Switched-mode power supplies.
1.4 Quick reference data
s VDS ≤ 25 V s Ptot ≤ 115 W s ID ≤ 75 A s RDSon ≤ 4.6 mΩ.
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