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PHD110NQ03LT - N-channel FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

  • s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package. 1.3.

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www.DataSheet4U.com PHD110NQ03LT N-channel TrenchMOS™ logic level FET Rev. 01 — 16 June 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Low on-state resistance s Low gate charge s Surface mount package. 1.3 Applications s Control FET in DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 25 V s Ptot ≤ 115 W s ID ≤ 75 A s RDSon ≤ 4.6 mΩ. 2.