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PHD108NQ03LT - N-Channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Simple gate drive required due to low gate charge.
  • Suitable for logic level gate drive sources 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHD108NQ03LT N-channel TrenchMOS logic level FET Rev. 04 — 5 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Simple gate drive required due to low gate charge „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC convertors „ Switched-mode power supplies 1.4 Quick reference data Table 1.