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PHD10N10E - Transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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Datasheet Details

Part number PHD10N10E
Manufacturer NXP
File Size 76.28 KB
Description Transistor
Datasheet download datasheet PHD10N10E Datasheet
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Full PDF Text Transcription

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Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 11 60 175 0.
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