PHD10N10E
PHD10N10E is Transistor manufactured by NXP Semiconductors.
Philips Semiconductors
Product Specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 11 60 175 0.25 UNIT V A W ˚C Ω
PINNING
- SOT428
PIN 1 2 3 tab gate drain source DESCRIPTION
PIN CONFIGURATION tab
SYMBOL d...
