PHP65N06T Datasheet - NXP

PHP65N06T, TrenchMOS transistor Standard level FET

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

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PHP65N06T_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

PHP65N06T

Manufacturer:

NXP ↗

File Size:

64.63 KB

Description:

TrenchMOS transistor Standard level FET

Applications

* PHP65N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 63 150 175 18 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain D

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PHP65N06T TrenchMOS transistor Standard level FET NXP

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