Datasheet4U Logo Datasheet4U.com

PHP8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated

PHP8ND50E Description

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

PHP8ND50E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance
* Fast reverse recovery diode SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A g RDS(ON) ≤ 0.85 Ω s tr

📥 Download Datasheet

Preview of PHP8ND50E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PHP8N50 - PowerMOS transistor (Philips)
  • PHP8.4 - 7/500 & 15/000 Watt TVS Module (Semtech Corporation)
  • PHP101NQ04T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PHP110NQ06LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • PHP110NQ08LT - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • PHP110NQ08T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PHP119NQ06T - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PHP120 - 7/500 & 15/000 Watt TVS Module (Semtech Corporation)

📌 All Tags

PowerMOS transistors FREDFET Avalanche energy rated NXP
NXP PHP8ND50E-like datasheet