PLB16004U Microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PLB16004U Microwave power transistor Product speciﬁcation Supersedes data of December 1994 1.
handbook, 4 columns 1 c b e 2 Top view MAM112 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal cer.

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Datasheet Specifications

Part number: PLB16004U
Manufacturer: NXP ↗
File Size: 93.17 KB
Datasheet: PLB16004U_PhilipsSemiconductors.pdf
Description: Microwave power transistor

Features

* Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR
* Interdigitated common-base structure provides high emitter efficiency
* Gold metallization with barrier realizes very stable characteristics and excellent lifetime

Applications

* Intended for use in common-base class C power amplifiers at 1.6 GHz. 3 PLB16004U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband ampliﬁer. MODE OF OPERATION Class C (CW) f (GHz) 1.6 VCC (V) 28 PL (W) >4.5 Gp (dB) >8.5 ηC (%) >40 Zi; ZL (Ω) see Figs

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