Description
handbook, 4 columns
1
c b e
2 Top view
MAM112
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange.Fig.1 Simplified outline and symbol.WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.The product is entirely safe provided that the BeO slab is not damaged.All persons who handle, use or dispose of this product should be aware of its nature and
Features
- Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR.
- Interdigitated common-base structure provides high emitter efficiency.
- Gold metallization with barrier realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Internal input and output prematching networks allow an easier design of circuits.
PLB16004U_PhilipsSemiconductors.pdf
