Description
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.
Features
- Input matching cell allows an easier design of circuits.
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Interdigitated structure provides high emitter efficiency.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
PLB16012U_PhilipsSemiconductors.pdf
