PMPB10XNE
description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- 2.2 k V ESD protection
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12
- 12 V
[1]
- - 12.9 A
- 10 14 mΩ
[1] Device mounted on an...
