Datasheet Summary
19 July 2012
12 V, single P-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- 1.5 kV ESD protection (human body model)
- Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in...
