PMPB10XNE Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMPB10XNE Key Features
- 2.2 kV ESD protection
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Exposed drain pad for excellent thermal conduction
- Tin-plated, 100% solderable side pads for optical solder inspection
PMPB10XNE Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables