Datasheet Summary
30 V, N-channel MOSFET
10 July 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench Superjunction Technology
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Side wettable flanks for optional solder inspection
3. Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portables
- Hard disk and puting power management
4. Quick reference...
