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PMPB14XN - N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • Side wettable flanks for optical solder inspection.
  • Exposed drain pad for excellent thermal conduction 3.

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Datasheet Details

Part number PMPB14XN
Manufacturer nexperia
File Size 306.73 KB
Description N-channel Trench MOSFET
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Full PDF Text Transcription

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PMPB14XN 40 V, N-channel Trench MOSFET 11 March 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • Exposed drain pad for excellent thermal conduction 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
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