PMPB11EN 30V N-channel Trench MOSFET

NXP

Description

PMPB11EN MD -6 30 V N-channel Trench MOSFET Rev.1 * 16 May 2012 Product data sheet 1.Product profile 1.1 General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PMPB11EN
Manufacturer: NXP ↗
File Size: 262.81 KB
Datasheet: PMPB11EN-NXP.pdf
Description: 30V N-channel Trench MOSFET

Features

* Trench MOSFET technology
* Very fast switching
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction

Applications

* Charging switch for portable devices
* DC-to-DC converters
* Power management in battery-driven portables
* Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage dr

PMPB11EN Distributors

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30V N-channel Trench MOSFET NXP

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