PMV130ENEA N-channel Trench MOSFET

NXP

Description

SOT23 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV130ENEA
Manufacturer: NXP ↗
File Size: 246.14 KB
Datasheet: PMV130ENEA-NXP.pdf
Description: N-channel Trench MOSFET

Features

* Logic-level compatible
* Very fast switching
* Trench MOSFET technology
* 1 kV ESD protected

Applications

* Relay driver
* High-speed line driver
* Low-side load switch
* Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-so

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PMV130ENEA N-channel Trench MOSFET NXP

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