PMV160UP 1.2A P-channel Trench MOSFET

NXP Semiconductors

Description

SO T2 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev.2 * 6 December 2011 Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET.

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Datasheet Specifications

Part number: PMV160UP
Manufacturer: NXP ↗ Semiconductors
File Size: 317.43 KB
Datasheet: PMV160UP-NXPSemiconductors.pdf
Description: 1.2A P-channel Trench MOSFET

Features

* 1.8 V RDSon rated
* Very fast switching

Applications

* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb 25

PMV160UP Distributors

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PMV160UP 1.2A P-channel Trench MOSFET NXP Semiconductors

NXP Semiconductors PMV160UP-like datasheet